品牌 hjsx 型号 740 种类 绝缘栅(mosfet) 沟道类型 n沟道 导电方式 增强型 开启电压 =（v） 夹断电压 =（v） 跨导 =（μs） 极间电容 =（pf） 低频噪声系数 =（db） 大漏极电流 =（ma） 大耗散功率 =（mw） 740(c) power mosfet 1 10.5 amps，400volts n-channel mosfet ■ description the 740(c) n-channel enhancement mode silicon gate power mosfet is designed for high voltage, high speed power switching applicatio such as switching regulato, switching converte, solenoid, motor drive, relay drive. ■ features ? rds(on) = 0.5@vgs =10 v ? low gate charge ( typical 28nc) ? fast switching capability ? avalanche energy specified ? improved dv/dt capability absolute maximum ratings(tc=25℃,unless otherwise specified) ratings parameter symbol to-220 to-220f units drain-source voltage vdss 400 v gate-source voltage vgss ±30 v tc=25℃ 10.5 10.5＊ a drain currenet continuous tc=100℃ id 6.6 6.6＊ a drain current pulsed (note 1) idp 42 42＊ a repetitive (note 1) ear 13.5 mj avalanche energy single pulse (note 2) eas 360 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ tc=25℃ 135 44 w total power dissipation derate above 25℃ pd 1.07 0.35 w/℃ junction temperature tj +150 ℃ storage temperature tstg -55~+150 ℃